参数资料
型号: ISL9N312AD3
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: POWER SUP SWITCHER 41W 24V MED
中文描述: 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封装: IPAK-3
文件页数: 6/11页
文件大小: 140K
代理商: ISL9N312AD3
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
Test Circuits and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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相关代理商/技术参数
参数描述
ISL9N312AD3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N312AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N312AD3ST_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N312AD3STNL 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N312AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube