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参数资料
| 型号： | ISL9N312AD3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | PS MEDICAL SWITCHING 12V 4.7A |
| 中文描述： | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 140K |
| 代理商： | ISL9N312AD3ST |
2002 Fairchild Semiconductor Corporation
January 2002
Rev. B, January 2002
I
ISL9N312AP3/ISL9N312AS3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.010
(Typ), V
GS
= 10V
r
DS(ON)
= 0.017
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 13nC, V
GS
= 5V
Q
gd
(Typ) = 4.5nC
C
ISS
(Typ) = 1450pF
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
30
±
20
Units
V
V
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GS
I
D
58
32
12
A
A
A
A
W
C
= 25
= 100
= 25
o
C, V
o
C, V
o
C, V
GS
= 10V)
= 4.5V)
= 10V, R
C
GS
C
GS
θ
JA
= 43
o
C/W)
Figure 4
75
0.5
-55 to 175
P
D
o
C
W/
o
o
C
T
J
, T
STG
C
R
R
R
θ
JC
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
62
43
o
C/W
o
C/W
o
C/W
θ
JA
θ
JA
2
copper pad area
Device Marking
N312AS
N312AP
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50
ISL9N312AS3ST
ISL9N312AP3
D
G
S
TO-263AB
TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURDRAIN
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9N312AD3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| ISL9N312AD3STNL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| ISL9N312AP3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N312AS3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N315AD3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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