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参数资料
型号： ISL9N312AD3ST
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： PS MEDICAL SWITCHING 12V 4.7A
中文描述： 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装： DPAK-3
文件页数： 8/11页
文件大小： 140K
代理商： ISL9N312AD3ST
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
PSPICE Electrical Model
.SUBCKT ISL9N312AP3 2 1 3 ;
rev May 2001
CA 12 8 9e-10
CB 15 14 9e-10
CIN 6 8 1.3e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 31.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.24e-9
LSOURCE 3 7 3.15e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.3e-3
RGATE 9 20 1.79
RLDRAIN 2 5 10
RLGATE 1 9 62.4
RLSOURCE 3 7 31.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2.5))}
.MODEL DBODYMOD D (IS = 1.8e-12 RS = 6.4e-3 TRS1 = 2e-5 TRS2 = 1.1e-6 XTI=2 CJO = 7e-10 TT = 6e-9 M = 0.55)
.MODEL DBREAKMOD D (RS = 1.28 TRS1 = 2.48e-3 TRS2 = -2e-5)
.MODEL DPLCAPMOD D (CJO = 3.8e-10 IS = 1e-30 N = 10 M = 0.42)
.MODEL MMEDMOD NMOS (VTO = 1.86 KP = 3 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.79)
.MODEL MSTROMOD NMOS (VTO = 2.43 KP = 50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.6 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 17.9 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.8e-4 TC2 = -2.3e-8)
.MODEL RDRAINMOD RES (TC1 = 1.6e-2 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-7)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.2e-3 TC2 = -10.3e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.9e-3 TC2 = 5e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -2.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= -5.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.6 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相关代理商/技术参数
参数描述
ISL9N312AD3ST_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N312AD3STNL 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N312AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N312AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N315AD3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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