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参数资料
| 型号： | ISL9N312AP3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| 中文描述： | 58 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/11页 |
| 文件大小： | 140K |
| 代理商： | ISL9N312AP3 |
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
(V
GS
= 4.5V)
Switching Characteristics
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
(V
GS
= 10V)
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
V
V
V
D
= 250
= 25V
= 0V
=
μ
A, V
GS
= 0V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
DS
μ
A
GS
T
C
= 150
o
250
±
100
I
GSS
Gate to Source Leakage Current
GS
±
20V
nA
Gate to Source Threshold Voltage
V
I
D
I
D
GS
= 58A, V
= 32A, V
= V
DS
, I
D
= 250
= 10V
= 4.5V
μ
A
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
GS
0.010
0.017
0.012
0.020
GS
V
f = 1MHz
DS
= 15V, V
GS
= 0V,
-
-
-
1450
300
120
25
13
1.5
4.3
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
V
V
GS
= 0V to 10V
= 0V to 5V
= 0V to 1V
V
I
D
I
g
DD
= 32A
= 1.0mA
= 15V
38
20
2.3
-
-
GS
-
-
-
-
GS
V
V
DD
GS
= 15V, I
= 4.5V, R
D
= 12A
= 11
GS
-
-
-
-
-
-
-
115
-
-
-
-
83
ns
ns
ns
ns
ns
ns
15
60
25
30
-
V
V
DD
GS
= 15V, I
= 10V, R
D
= 12A
= 11
GS
-
-
-
-
-
-
-
8
57
-
-
-
-
115
ns
ns
ns
ns
ns
ns
30
45
30
-
I
D
= 2.9A, L = 3.0mH
195
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
I
I
I
SD
= 32A
= 15A
= 32A, dI
= 32A, dI
-
-
-
-
-
-
-
-
1.25
1.0
20
7
V
V
ns
nC
SD
t
Q
rr
Reverse Recovery Time
Reverse Recovered Charge
SD
SD
/dt = 100A/
/dt = 100A/
μ
μ
s
s
RR
SD
SD
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相关代理商/技术参数 |
参数描述 |
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| ISL9N312AS3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N315AD3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N315AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N316AD3ST | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ISL9N316AP3 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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