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参数资料
型号： ISL9N312AP3
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 58 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数： 9/11页
文件大小： 140K
代理商： ISL9N312AP3
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
SABER Electrical Model
REV May 2001
template isl9n312ap3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 1.8e-12, rs = 6.4e-3, trs1 = 2e-5, trs2 = 1.1e-6, xti=2, cjo = 7e-10, tt = 6e-9, m = 0.55)
dp..model dbreakmod = (rs = 1.28, trs1 = 2.48e-3, trs2 = -2e-5)
dp..model dplcapmod = (cjo = 3.8e-10, isl=10e-30, nl=10, m=0.42)
m..model mmedmod = (type=_n, vto = 1.86, kp=3, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 2.43, kp = 50, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.6, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.0, voff = -2.0)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.0, voff = -5.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.6, voff = 0.2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = -0.6)
c.ca n12 n8 = 9e-10
c.cb n15 n14 = 9e-10
c.cin n6 n8 = 1.3e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 6.24e-9
l.lsource n3 n7 = 3.15e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 9.8e-4, tc2 = -2.3e-8
res.rdrain n50 n16 = 2.3e-3, tc1 = 1.6e-2, tc2 = 1e-5
res.rgate n9 n20 = 1.79
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 62.4
res.rlsource n3 n7 = 31.5
res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 =1e-7
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 6e-3, tc1 = 1e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.9e-3, tc2 = 5e-7
res.rvthres n22 n8 = 1, tc1 = -1.2e-3, tc2 = -10.3e-6
spe.ebreak n11 n7 n17 n18 = 31.2
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e-6/180))** 2.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相关代理商/技术参数
参数描述
ISL9N312AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N315AD3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N315AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N316AD3ST 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N316AP3 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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