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参数资料
| 型号： | ISL9R860S3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 129K |
| 代理商： | ISL9R860S3ST |
2004 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
I
Figure 7. Reverse Recovery Softness Factor vs dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
100
1
2
3
4
5
6
700
1000
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
S
200
300
400
500
600
800
900
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
50
100
150
200
250
300
350
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
Q
R
,
100
700
1000
200
300
400
500
600
800
900
V
R
, REVERSE VOLTAGE (V)
C
J
,
0
200
400
600
800
1000
1200
0.1
100
10
1
4
0
150
155
165
140
175
160
6
8
10
T
C
, CASE TEMPERATURE (
o
C)
I
F
,
170
145
2
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
1.0
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| ISL9V2020D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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