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参数资料
| 型号： | ISL9V5036S3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 46 A, 420 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 147K |
| 代理商： | ISL9V5036S3ST |
2004 Fairchild Semiconductor Corporation
ISL9V5036S3S
T
/ ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
I
T
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
V5036S
V5036P
V5036S
Device
Package
TO-263AB
TO-220AA
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800
50
50
ISL9V5036S3ST
ISL9V5036P3
ISL9V5036S3
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
CER
Collector to Emitter Breakdown Voltage
I
C
= 2mA, V
GE
= 0,
R
G
= 1K
,
See Fig. 15
T
J
= -40 to 150
°
C
I
C
= 10mA, V
GE
= 0,
R
G
= 0
,
See Fig. 15
T
J
= -40 to 150
°
C
I
C
= -75mA, V
GE
= 0V,
T
C
= 25
°
C
I
GES
= ± 2mA
V
CER
= 250V,
R
G
= 1K
,
See Fig. 11
V
EC
= 24V, See
Fig. 11
330
360
390
V
BV
CES
Collector to Emitter Breakdown Voltage
360
390
420
V
BV
ECS
Emitter to Collector Breakdown Voltage
30
-
-
V
BV
GES
I
CER
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
±12
-
-
±14
-
-
-
V
μA
mA
T
C
= 25
°
C
T
C
= 150
°
C
25
1
I
ECS
Emitter to Collector Leakage Current
T
C
= 25
°
C
T
C
= 150
°
C
-
-
-
-
-
1
mA
mA
40
-
30K
R
1
R
2
Series Gate Resistance
Gate to Emitter Resistance
75
-
10K
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 10A,
V
GE
= 4.0V
I
C
= 15A,
V
GE
= 4.5V
T
C
= 25
°
C,
See Fig. 4
T
C
= 150
°
C
-
1.17
1.60
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
-
1.50
1.80
V
Q
G(ON)
Gate Charge
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
I
C
= 10A, V
CE
= 12V
-
32
-
nC
V
GE(TH)
Gate to Emitter Threshold Voltage
T
C
= 25
°
C
T
C
= 150
°
C
1.3
0.75
-
-
2.2
1.8
V
V
V
GEP
Gate to Emitter Plateau Voltage
-
3.0
-
V
t
d(ON)R
t
rR
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
CE
= 14V, R
L
= 1
,
V
GE
= 5V, R
G
= 1K
T
J
= 25
°
C, See Fig. 12
V
CE
= 300V, L = 2mH
,
V
GE
= 5V, R
G
= 1K
T
J
= 25
°
C, See Fig. 12
T
J
= 25
°
C, L = 670
μ
H,
R
G
= 1K
,
V
GE
= 5V, See
Fig. 1 & 2
-
-
0.7
2.1
4
7
μs
μs
t
d(OFF)L
t
fL
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
-
-
10.8
2.8
15
15
μs
μs
SCIS
Self Clamped Inductive Switching
-
-
500
mJ
R
θ
JC
Thermal Resistance Junction-Case
TO-263, TO-220, TO-262
-
-
0.6
°
C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9V5036S3ST_Q | 功能描述:马达/运动/点火控制器和驱动器 31a 360V IGBT LL avalanche RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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| ISL9V5045S3 | 功能描述:马达/运动/点火控制器和驱动器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| ISL9V5045S3S | 功能描述:马达/运动/点火控制器和驱动器 SINGLE N-CH 450V RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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