参数资料
型号: ISL9V5036S3ST
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 46 A, 420 V, N-CHANNEL IGBT, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 4/8页
文件大小: 147K
代理商: ISL9V5036S3ST
2004 Fairchild Semiconductor Corporation
ISL9V5036S3S
T
/ ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
I
T
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
Typical Characteristics
(Continued)
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
40
0
2.0
1.0
3.0
4.0
30
T
J
= 175
°
C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
20
10
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
2.0
1.0
3.0
4.0
50
40
30
0
2.5
1.5
3.5
4.5
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 25
°
C
T
J
= 175
°
C
T
J
= -40
°
C
20
10
I
C
,
T
C
, CASE TEMPERATURE (
°
C)
50
25
175
125
75
50
100
150
40
30
20
10
0
V
GE
= 4.0V
175
50
100
2.0
1.8
1.6
1.4
1.0
V
T
,
T
J
, JUNCTION TEMPERATURE (
°
C)
150
0
125
1.2
V
CE
= V
GE
I
CE
= 1mA
-50
75
25
-25
L
T
J
, JUNCTION TEMPERATURE (
°
C)
1000
10
0.1
10000
100
1
25
-25
175
125
75
-50
0
50
100
150
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
25
175
125
75
50
100
150
T
J
, JUNCTION TEMPERATURE (
°
C)
S
20
16
12
6
2
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Resistive t
OFF
Inductive t
OFF
Resistive t
ON
10
14
18
8
4
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