参数资料
型号: ISL9V5036S3ST
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 46 A, 420 V, N-CHANNEL IGBT, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 5/8页
文件大小: 147K
代理商: ISL9V5036S3ST
2004 Fairchild Semiconductor Corporation
ISL9V5036S3S
T
/ ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
I
T
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics
(Continued)
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3000
1000
500
1500
0
10
5
15
20
25
0
C
IES
FREQUENCY = 1 MHz
C
OES
C
RES
2500
2000
Q
G
, GATE CHARGE (nC)
V
G
,
0
2
4
8
0
10
20
30
40
50
3
5
7
6
1
I
G(REF)
= 1mA, R
L
= 0.6
,
T
J
= 25
°
C
V
CE
= 6V
V
CE
= 12V
B
C
,
R
G
, SERIES GATE RESISTANCE (k
)
360
352
348
356
10
2000
1000
3000
344
100
354
350
358
346
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 175
°
C
I
CER
= 10mA
342
340
Z
t
,
T
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
10
-6
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-3
10
-4
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