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| 型号： | ISO7221AQDRQ1 |
| 厂商： | Texas Instruments |
| 文件页数： | 15/24页 |
| 文件大小： | 0K |
| 描述： | IC DGTL ISOLATOR 1MBPS DL 8SOIC |
| 标准包装： | 1 |
| 输入 - 1 侧/2 侧： | 1/1 |
| 通道数： | 2 |
| 电源电压： | 3 V ~ 5.5 V |
| 电压 - 隔离： | 2500Vrms |
| 数据速率： | 1Mbps |
| 传输延迟： | 410ns |
| 输出类型： | CMOS |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 125°C |
| 其它名称： | 296-27336-6 |
ISO7220A-Q1
ISO7221A-Q1
ISO7221C-Q1
www.ti.com
SLLS965C – JULY 2009 – REVISED MAY 2012
ISOLATION GLOSSARY
Creepage Distance — The shortest path between two conductive input to output leads measured along the
surface of the insulation. The shortest distance path is found around the end of the package body.
Clearance — The shortest distance between two conductive input to output leads measured through air (line of
sight).
Input-to Output Barrier Capacitance — The total capacitance between all input terminals connected together,
and all output terminals connected together.
Input-to Output Barrier Resistance — The total resistance between all input terminals connected together, and
all output terminals connected together.
Primary Circuit — An internal circuit directly connected to an external supply mains or other equivalent source
which supplies the primary circuit electric power.
Secondary Circuit — A circuit with no direct connection to primary power, and derives its power from a separate
isolated source.
Comparative Tracking Index (CTI) — CTI is an index used for electrical insulating materials which is defined as
the numerical value of the voltage which causes failure by tracking during standard testing. Tracking is the
process that produces a partially conducting path of localized deterioration on or through the surface of an
insulating material as a result of the action of electric discharges on or close to an insulation surface -- the higher
CTI value of the insulating material, the smaller the minimum creepage distance.
Generally, insulation breakdown occurs either through the material, over its surface, or both. Surface failure may
arise from flashover or from the progressive degradation of the insulation surface by small localized sparks. Such
sparks are the result of the breaking of a surface film of conducting contaminant on the insulation. The resulting
break in the leakage current produces an overvoltage at the site of the discontinuity, and an electric spark is
generated. These sparks often cause carbonization on insulation material and lead to a carbon track between
points of different potential. This process is known as tracking .
Copyright ? 2009–2012, Texas Instruments Incorporated
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Product Folder Link(s): ISO7220A-Q1 ISO7221A-Q1 ISO7221C-Q1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISO7221B | 制造商:TI 制造商全称:Texas Instruments 功能描述:DUAL DIGITAL ISOLATORS |
| ISO7221BD | 功能描述:隔离器接口集成电路 Dual Channel 1/1 5 Mbps Dig Isolator RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| ISO7221BD | 制造商:Texas Instruments 功能描述:IC DIGITAL ISOLATOR 70NS SOIC-8 制造商:Texas Instruments 功能描述:IC, DIGITAL ISOLATOR, 70NS, SOIC-8 |
| ISO7221BDG4 | 功能描述:隔离器接口集成电路 Dual Channel 1/1 5Mbps Dig Isolator RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| ISO7221BDR | 功能描述:隔离器接口集成电路 Dual Channel High Spd Digital Isolator RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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