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参数资料
| 型号： | IXA531S10 |
| 厂商： | IXYS |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC BRIDGE DRVR 3PH 500MA 48-MLP |
| 标准包装： | 500 |
| 配置： | 3 相桥 |
| 输入类型： | 反相 |
| 延迟时间： | 425ns |
| 电流 - 峰： | 600mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 650V |
| 电源电压： | 8 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-MLP |
| 供应商设备封装： | 48-MLP |
| 包装： | 带卷 (TR) |
IXA531
500mA 3-Phase Bridge Driver
Preliminary Data Sheet
Features
? Fully operational to +650V
General Description
The IXA531 is a monolithic, 3-phase, MOSFET/IGBT
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Tolerant of negative transient voltages
dV/dt immune (50V/ns)
Latch-up protected over entire operating range
Fault-current shutdown for all drive outputs
User selectable delay or latching function for
clearing of the FAULT signal, independent
user controlled clearing of the FAULT signal
is also available
UVLO protection for all drive outputs
Enable signal capable of disabling all driver outputs
3 half-bridge driver pairs (independent)
3.3V logic compatible
Cross-conduction prevention logic,
220 ns - 360ns Phase leg deadtime
Peak output current: 600mA Pull-up/Source,
600mA Pull-down/Sink
Wide operating supply voltage range: 8.0V to 35V
Capacitive load drive capability: 1250pF in < 100ns
Matched, low propagation delay times
Low supply current
Monolithic construction ___
Fault monitoring is accompanied by a FLT
signal indication, with programmable reset or user
selectable latched protection
Target package power dissipation capability is 2.0W.
Full level of function available from -55°C to + 125°C
Available in 48-Lead 7mm x 7mm MLP Quad
package and 44-Lead PLCC package
gate driver consisting of three independent, high and low
side output channels. In addition to the six inputs,
which are CMOS/TTL Compatible, for the three
corresponding high side and three low side outputs,
there are dedicated lines for FAULT, ENABLE and
RESET. Overload/Short Circuit protection is
implemented by sensing a voltage across a shunt or low
value resistor which carries load current. Upon
Overload/Short Circuit detection, all outputs are
disabled. Likewise ENABLE (EN) pin, when LOW under
abnormal operating conditions, affords soft shut down of
outputs. FAULT(FLT) signal‘s status indicates that shut
down has occurred either due to Overload/Short Circuit
in driven MOSFET/IGBT or Under Voltage on V CL.
Clearing of FAULT (FLT) signal and restoration of
normal operation ensue automatically after a
programmed delay using an RC Network wired at RST
(RESET) pin. Matched propagation delays ensure
proper operation even at very high switching
frequencies. Absence of cross conduction in output
stages removes possibility of shoot through in driven
power MOSFETs or IGBTs.
Applications
? Driving MOSFETs and IGBTs in half-bridge circuits
? High voltage, high side and low side drivers
? Motor Controls
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Switch Mode Power Supplies (SMPS)
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DC to DC Converters
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Class D Switching Amplifiers
Ordering Information
Part
Package
IXA531S10
48L - SSLGA
IXA531L4
44L - PLCC
Warning: The IXA531 is ESD sensitive.
Copyright ? IXYS CORPORATION 2005
1
First Release
DS99187A(12/05)
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相关代理商/技术参数 |
参数描述 |
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| IXA531S10T/R | 功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXA55I1200HJ | 功能描述:IGBT 晶体管 XPT 1200V 84A Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXA60IF1200NA | 功能描述:IGBT 模块 XPT IGBT Copack RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IXA611 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:600mA Half-Bridge Driver |
| IXA611M6 | 功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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