参数资料
型号: IXBOD1-22RD
厂商: IXYS
文件页数: 6/8页
文件大小: 0K
描述: IC DIODE MODULE BOD 0.2A 2200V
标准包装: 20
电压 - 箝位: 2200V(2.2kV)
技术: 混合技术
电路数: 3
应用: 高电压
封装/外壳: 径向
供应商设备封装: 轴向
包装: 散装
Application
Protection of thyristors against overvoltages in forward
direction.
V BO (T VJ ) = V BO, 25 ° C [1+KT(T VJ - 25 ° C)]
i
Thyristor
BOD
V D
Calculation example
a. The maximum junction temperature shall be
calculated for a module IXBOD 1 -30R at an
ambient temperature T a = 60 °C, an exponentially
decaying current I TM = 40A, a pulsewidth tp = 2 μ s,
an operating frequency f = 50 Hz and natural
convection. From the diagram Fig. 6 the energy per
pulse is obtained:
E p1 = 6 x 10 -3 Ws
For a module IXBOD1-30R the number of single
IXBOD elements is:
n = 3
At natural air cooling the thermal resistance junction
to ambient amounts to (Fig.8):
R thJA = 20K/W
and the unknown temperature can be calculated as:
T VJmax1 = T a + n ? f ? E p ? R thJA + K p ? E p
T VJmax1 = 60 + 18 + 4.2 = 82.2°C
H-6
b. If following these steady-state conditions an
overload for 1 minute occurs with I TM = 60 A and a
pulse-width tp = 4 μ s at the same operating
frequency f = 50 Hz, then the resulting maximum
junction temperature is calculating as follows:
T VJmax2 = T VJmax1 + (E p2 -E p1 ) ? n ? f ?Z thJA (t) + Kp ? (E p2 -E p1 )
The diagrams Fig. 11 and Fig. 8 show
E p2 = 14x10 -3 Ws
Z thJA (t = 1min) = 12K/W
From what follows:
T VJmax2 = 82.2 + 14.4 + 5,6 = 102.2 °C
which is allowed because the maximum admissible
junction temperature T VJM = 125 °C.
? 2000 IXYS All rights reserved
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