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| 型号： | IXDE504D2T/R |
| 厂商： | IXYS |
| 文件页数： | 12/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 4A 8-DFN |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 19ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN |
| 供应商设备封装： | 8-DFN（5x4） |
| 包装： | 带卷 (TR) |
IXDD504 / IXDE504
Supply Bypassing and Grounding Practices, Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXDD504 or IXDE504, it is very important to keep
certain design criteria in mind, in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing , Grounding , and minimizing the Output Lead
Inductance .
Say, for example, we are using the IXDD504 to charge a
2500pF capacitive load from 0 to 25 volts in 25ns .
Using the formula: I C = C (? V / ? t), where ? V=25V C=2500pF
and ? t=25ns we can determine that to charge 2500pF to 25
volts in 25ns will take a constant current of 2.5A. (In reality, the
charging current won’t be constant, and will peak somewhere
around 4A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDD504
must be able to draw this 2.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the
power supply at the driver with a capacitance value that is a
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected, low inductance, low resistance, high-pulse current-
service capacitors). Lead lengths may radiate at high frequency
due to inductance, so care should be taken to keep the lengths
of the leads between these bypass capacitors and the IXDD504
to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDD504
must be able to drain this 2.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDD504
and it’s load. Path #2 is between the IXDD504 and it’s power
supply. Path #3 is between the IXDD504 and whatever logic
is driving it. All three of these paths should be as low in
resistance and inductance as possible, and thus as short as
practical. In addition, every effort should be made to keep
these three ground paths distinctly separate. Otherwise, (for
instance), the returning ground current from the load may
develop a voltage that would have a detrimental effect on the
logic line driving the IXDD504.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and it’s
load as short and wide as possible. If the driver must be
placed farther than 0.2” from the load, then the output leads
should be treated as transmission lines. In this case, a
twisted-pair should be considered, and the return line of each
twisted pair should be placed as close as possible to the
ground pin of the driver, and connect directly to the ground
terminal of the load.
Copyright ? 2007 IXYS CORPORATION All rights reserved
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDE504PI | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504SIA | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504SIAR | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
| IXDE504SIAT | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
| IXDE504SIAT/R | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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