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参数资料
| 型号： | IXDE504D2T/R |
| 厂商： | IXYS |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 4A 8-DFN |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 19ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN |
| 供应商设备封装： | 8-DFN（5x4） |
| 包装： | 带卷 (TR) |
IXDD504 / IXDE504
Absolute Maximum Ratings (1)
Operating Ratings (2)
Parameter
Value
Parameter
Value
Supply Voltage
35 V
Operating Supply Voltage 4.5V to 30V
All Other Pins (unless specified
-0.3 V to V CC + 0.3V
Operating Temperature Range
-55 ° C to 125 ° C
otherwise)
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
150 ° C
-65 ° C to 150 ° C
300 ° C
Package Thermal Resistance *
8-PinPDIP (PI) θ J-A (typ) 125 ° C/W
8-Pin SOIC (SIA) θ J-A (typ) 200 ° C/W
8-Lead DFN (D2) θ J-A (typ) 125-200 ° C/W
8-Lead DFN (D2) θ J-C (max) 2.1 ° C/W
8-Lead DFN (D2) θ J-S (typ) 6.4 ° C/W
Electrical Characteristics @ T A = 25 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 30V .
All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions . All specifications are for one channel.
(4)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V IH , V ENH
V IL , V ENL
High input & EN voltage
Low input & EN voltage
4.5V ≤ V IN ≤ 18V
4.5V ≤ V IN ≤ 18V
3
0.8
V
V
V IN
V EN
Input voltage range
Enable voltage range
-5
- 0.3
V CC + 0.3
V CC + 0.3
V
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
R OL
High state output resistance
Low state output resistance
V CC = 18V
I OUT = 10mA
V CC = 18V
I OUT = 10mA
1.5
1.2
2.5
2.0
?
?
I PEAK
I DC
Peak output current
Continuous output current
V CC = 15V
Limited by package
dissipation
4
1
A
A
t R
t F
t ONDLY
t OFFDLY
t ENOH
t DOLD
V CC
R EN
Rise time
Fall time
On-time propagation delay
Off-time propagation delay
Enable to output high delay time
Disable to high impedance state
delay time
Power supply voltage
Enable Pull-up Resistor
C LOAD =1000pF
V CC =18V
C LOAD =1000pF
V CC =18V
C LOAD =1000pF
V CC =18V
C LOAD =1000pF
V CC =18V
4.5
9
8
19
18
15
63
18
200
16
14
40
35
30
100
30
ns
ns
ns
ns
ns
ns
V
k ?
V CC = 18V, V IN = 0V
20
μ A
I CC
Power supply current
V IN = 3.5V
1
3
mA
V IN = V CC
IXYS reserves the right to change limits, test conditions, and dimensions.
3
20
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDE504PI | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504SIA | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE504SIAR | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
| IXDE504SIAT | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
| IXDE504SIAT/R | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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