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参数资料
| 型号： | IXDE509PI |
| 厂商： | IXYS |
| 文件页数： | 13/14页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 9A 8-DIP |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 18ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IXDD509 / IXDE509
Supply Bypassing and Grounding Practices, Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXDD509/IXDE509, it is very important to keep
certain design criteria in mind, in order to optimize
performance of the driver. Particular attention needs to be
paid to Supply Bypassing , Grounding , and minimizing the
Output Lead Inductance .
Say, for example, we are using the IXDD509 to charge a
5000pF capacitive load from 0 to 25 volts in 25ns…
Using the formula: I= C (? V / ? t), where ? V=25V C=5000pF
& ? t=25ns we can determine that to charge 5000pF to 25
volts in 25ns will take a constant current of 5A. (In reality,
the charging current won’t be constant, and will peak
somewhere around 9A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the
IXDD509 must be able to draw this 5A of current from the
power supply in the 25ns. This means that there must be
very low impedance between the driver and the power
supply. The most common method of achieving this low
impedance is to bypass the power supply at the driver with
a capacitance value that is a magnitude larger than the
load capacitance. Usually, this would be achieved by
placing two different types of bypassing capacitors, with
complementary impedance curves, very close to the driver
itself. (These capacitors should be carefully selected, low
inductance, low resistance, high-pulse current-service
capacitors). Lead lengths may radiate at high frequency
due to inductance, so care should be taken to keep the
lengths of the leads between these bypass capacitors and
the IXDD509 to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the
IXDD509 must be able to drain this 5A of current into an
adequate grounding system. There are three paths for
returning current that need to be considered: Path #1 is
between the IXDD509 and it’s load. Path #2 is between the
IXDD509 and it’s power supply. Path #3 is between the
IXDD509 and whatever logic is driving it. All three of these
paths should be as low in resistance and inductance as
possible, and thus as short as practical. In addition, every
effort should be made to keep these three ground paths
distinctly separate. Otherwise, for instance, the returning
ground current from the load may develop a voltage that
would have a detrimental effect on the logic line driving the
IXDD509.
IXYS reserves the right to change limits, test conditions, and dimensions.
13
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding
are issues related to the Output Lead Inductance. Every
effort should be made to keep the leads between the
driver and it’s load as short and wide as possible. If the
driver must be placed farther than 0.2” from the load, then
the output leads should be treated as transmission
lines. In this case, a twisted-pair should be considered,
and the return line of each twisted pair should be placed
as close as possible to the ground pin of the driver, and
connect directly to the ground terminal of the load.
相关PDF资料 |
PDF描述 |
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| 1485B36 | WIREWAY 36" STEEL 2.5X2.5" GREY |
| IXDE509D1T/R | IC GATE DRIVER 9A 6-DFN |
| IXDE509D1 | IC GATE DRIVER 9A 6-DFN |
| T95D336M025EZSL | CAP TANT 33UF 25V 20% 2917 |
| 1485B4P | WIREWAY 45 DEG STEEL 2.5X2.5" GR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDE509SIA | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE509SIAT/R | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE514D1 | 功能描述:功率驱动器IC 14 Amps 35V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE514D1T/R | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE514PI | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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