参数资料
型号: IXDE509PI
厂商: IXYS
文件页数: 3/14页
文件大小: 0K
描述: IC GATE DRIVER 9A 8-DIP
产品变化通告: Discontinuation Notice 15/Jun/2010
标准包装: 50
配置: 低端
输入类型: 反相
延迟时间: 18ns
电流 - 峰: 9A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 30 V
工作温度: -55°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
IXDD509 / IXDE509
Absolute Maximum Ratings (1)
Operating Ratings (2)
Parameter
Value
Parameter
Value
Supply Voltage
35 V
Operating Supply Voltage 4.5V to 30V
All Other Pins (unless specified
-0.3 V to V CC + 0.3V
Operating Temperature Range
-55 ° C to 125 ° C
otherwise)
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
150 ° C
-65 ° C to 150 ° C
300 ° C
Package Thermal Resistance *
8-PinPDIP (PI) θ J-A (typ) 125 ° C/W
8-Pin SOIC (SIA) θ J-A (typ) 200 ° C/W
6-Lead DFN (D1) θ J-A (typ) 125-200 ° C/W
6-Lead DFN (D1) θ J-C (max) 2.0 ° C/W
6-Lead DFN (D1) θ J-S (typ) 6.3 ° C/W
Electrical Characteristics @ T A = 25 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 30V .
All voltage measurements with respect to GND. IXD_509 configured as described in Test Conditions . (4)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V IH , V ENH
V IL , V ENL
High input & EN voltage
Low input & EN voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.4
0.8
V
V
V IN
V EN
Input voltage range
Enable voltage range
-5
-.3
V CC + 0.3
V CC + 0.3
V
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
R OL
High state output
resistance
Low state output
resistance
V CC = 18V
V CC = 18V
0.6
0.4
1
0.8
?
?
I PEAK
I DC
Peak output current
Continuous output current
V CC = 15V
Limited by package power
dissipation
9
2
A
A
t R
t F
t ONDLY
t OFFDLY
t ENOH
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Enable to output high
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
V CC =18V
25
23
18
19
25
45
40
35
30
50
ns
ns
ns
ns
ns
delay time
t DOLD
Disable to output high
V CC =18V
60
80
ns
impedance delay time
V CC
I CC
Power supply voltage
Power supply current
V CC = 18V, V IN = 0V
V IN = 3.5V
4.5
18
1
30
75
3
V
μ A
mA
V IN = V CC
3
IXYS reserves the right to change limits, test conditions, and dimensions.
75
mA
相关PDF资料
PDF描述
1485B36 WIREWAY 36" STEEL 2.5X2.5" GREY
IXDE509D1T/R IC GATE DRIVER 9A 6-DFN
IXDE509D1 IC GATE DRIVER 9A 6-DFN
T95D336M025EZSL CAP TANT 33UF 25V 20% 2917
1485B4P WIREWAY 45 DEG STEEL 2.5X2.5" GR
相关代理商/技术参数
参数描述
IXDE509SIA 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDE509SIAT/R 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDE514D1 功能描述:功率驱动器IC 14 Amps 35V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDE514D1T/R 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDE514PI 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube