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参数资料
| 型号： | IXDS430SI |
| 厂商： | IXYS |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSF/IGBT 30A 28-SOIC |
| 标准包装： | 27 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 41ns |
| 电流 - 峰： | 30A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 8.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC |
| 包装： | 盒 |
IXDN430 / IXDI430 / IXDD430 / IXDS430
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Supply Voltage
Value
40 V
P a ra m e te r
M a xim um Junction T em perature
V a lu e
150 o C
-55 o C to 125 o C
0.95 o C /W
62.5 o C /W
All Other Pins
Power Dissipation, T AMBIENT ≤ 25 oC
TO220 (CI), TO263 (YI)
Derating Factors (to Ambient)
TO220 (CI), TO263 (YI)
Storage Temperature
Lead Temperature (10 sec)
-0.3 V to VCC + 0.3 V
2W
0.016W/oC
-65 oC to 150 oC
300 oC
O pera ting T em perature R ange
T herm al Im pedance T O 220 (C I), TO 263 (Y I)
θ JC (Ju nction T o C ase)
θ JA (Ju nction T o A m bien t)
T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I)
θ JC (Ju nction T o C ase) 3 o C /W
Electrical Characteristics
Unless otherwise noted, T A = 25 o C, 8.5V ≤ V CC ≤ 35V .
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions .
S ym b o l
P a r a m e te r
T e s t C o n d itio n s
M in
T yp
M ax
U n its
V IH
V IL
H ig h in p u t v o lta g e
L o w in p u t v o lta g e
0 V ≤ V IN ≤ V C C , 8 .5 V ≤ V IN ≤ 1 8 V
0 V ≤ V IN ≤ V C C , 8 .5 V ≤ V IN ≤ 1 8 V
3 .5
0 .8
V
V
V IN
In p u t v o lta g e r a n g e
-5
V C C + 0 .3
V
I IN
In p u t c u rre n t
0 V ≤ V IN ≤ V C C
-1 0
10
μ A
V OH
V OL
H ig h o u tp u t v o lta g e
L o w o u tp u t v o lta g e
V C C - 0 .0 2 5
0 .0 2 5
V
V
R OH
O u tp u t re s is ta n c e
V CC = 18V
0 .3
0 .4
?
@ O u tp u t h ig h
R OL
O u tp u t re s is ta n c e
V CC = 18V
0 .2
0 .3
?
@ O u tp u t L o w
I P E A K
I D C
P e a k o u tp u t c u rre n t
C o n tin u o u s o u tp u t
V CC = 18V
L im ite d b y p a c k a g e p o w e r
30
8
A
A
c u rre n t
d is s ip a tio n
V EN
E n a b le v o lta g e ra n g e
IX D D 4 3 0 O n ly
- 0 .3
V c c + 0 .3
V
V ENH
V ENL
R EN
H ig h E n In p u t V o lta g e
L o w E n In p u t V o lta g e
E N In p u t R e s is ta n c e
IX D D 4 3 0 O n ly
IX D D 4 3 0 O n ly
IX D S 4 3 0 O n ly
2 /3 V c c
400
1 /3 V c c
V
V
K ohm
V IN V
IN V V o lta g e R a n g e
IX D S 4 3 0 O n ly
- 0 .3
V c c + 0 .3
V
V IN V H
V IN V L
R IN V
H ig h IN V In p u t V o lta g e
L o w IN V In p u t V o lta g e
IN V In p u t R e s is ta n c e
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
2 /3 V c c
400
1 /3 V c c
V
V
K ohm
t R
t F
t O N D L Y
R is e tim e
F a ll tim e
O n -tim e p ro p a g a tio n
C L = 5 6 0 0 p F V c c = 1 8 V
C L = 5 6 0 0 p F V c c = 1 8 V
C L = 5 6 0 0 p F V c c = 1 8 V
18
16
41
20
18
45
ns
ns
ns
d e la y
t O FF D L Y
O ff-tim e p ro p a g a tio n
C L = 5 6 0 0 p F V c c = 1 8 V
35
39
ns
d e la y
t E N O H
E n a b le to o u tp u t h ig h
IX D D 4 3 0 O n ly , V c c = 1 8 V
47
ns
d e la y tim e
t D O L D
D is a b le to o u tp u t lo w
IX D D 4 3 0 O n ly , V c c = 1 8 V
120
ns
d e la y tim e
V CC
I C C
P o w e r s u p p ly v o lta g e
P o w e r s u p p ly c u rre n t
V IN = 3 .5 V
V IN = 0 V
8 .5
18
1
0
35
3
10
V
mA
μ A
V IN = + V C C
10
μ A
U VLO
IX D _ 4 3 0 M ; IX D S 4 3 0 :
IX D _ 4 3 0 ; IX D S 4 3 0 :
U V S E L = V C C (M O S F E T )
U V S E L = O P E N (IG B T )
7 .5
1 0 .5
8 .5
1 1 .7 5
9 .5
1 3 .0
V
V
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
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