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| 型号： | IXFA130N10T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 130A D2PAK |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 130A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.1 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 104nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5080pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 管件 |
IXFA130N10T
IXFP130N10T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXFA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
55
93
5080
630
95
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
R G = 5 Ω (External)
30
47
44
28
104
ns
ns
ns
ns
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
30
29
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCH
TO-220
0.50
0.42
° C/W
° C/W
b
b2
c
c2
0.51
1.14
0.46
1.14
0.99
1.40
0.74
1.40
.020
.045
.018
.045
.039
.055
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
Source-Drain Diode
E
E1
9.65
6.86
10.29
8.13
.380
.270
.405
.320
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
e
L
L1
2.54
14.61
2.29
BSC
15.88
2.79
.100
.575
.090
BSC
.625
.110
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
130
350
A
A
L2
L3
L4
R
1.02
1.27
0
0.46
1.40
1.78
0.38
0.74
.040
.050
0
.018
.055
.070
.015
.029
V SD
t rr
I RM
Q rr
I F = 25A, V GS = 0V, Note 1
I F = 65A, -di/dt = 100A/ μ s
V R = 0.5 ? V DSS , V GS = 0V
67
4.7
160
1.0
V
ns
A
nC
TO-220 (IXFP) Outline
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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