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| 型号： | IXFA230N075T2 |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 230A TO-263AA |
| 标准包装： | 50 |
| 系列： | * |
TrenchT2 TM HiperFET TM
Power MOSFET
IXFA230N075T2
IXFP230N075T2
V DSS
I D25
R DS(on)
= 75V
= 230A
≤ 4.2m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol
V DSS
V DGR
V GSM
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
Maximum Ratings
75
75
± 20
V
V
V
TO-220AB (IXFP)
I D25
I LRMS
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
230
120
A
A
G
DS
D (Tab)
I DM
T C = 25 ° C, Pulse Width Limited by T JM
700
A
I A
E AS
P D
T J
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
115
850
480
-55 ... +175
A
mJ
W
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T JM
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
175
-55 ... +175
300
260
1.13 / 10
2.5
3.0
° C
° C
° C
° C
Nm/lb.in.
g
g
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
BV DSS
V GS = 0V, I D = 250 μ A
75
V
Applications
V GS(th)
V DS = V GS , I D = 1mA
2.0
4.0
V
Automotive
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
± 200 nA
25 μ A
- Motor Drives
- 12V Power Bus
- ABS Systems
R DS(on)
V GS = 10V, I D = 50A, Note 1
T J = 150 ° C
250 μ A
4.2 m Ω
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS100074A(03/10)
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| IXFA230N075T2-7 | 功能描述:MOSFET TrenchT2 HiperFETs Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFA26N50P3 | 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFA3N120 | 功能描述:MOSFET 3 Amps 1200V 4.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFA3N80 | 功能描述:MOSFET 3.6 Amps 800V 3.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFA4N100P | 功能描述:MOSFET 4 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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