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| 型号： | IXFH120N25T |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 120A TO-247 |
| 标准包装： | 30 |
| 系列： | * |
Preliminary Technical Information
Trench TM HiperFET TM
Power MOSFETs
IXFT120N25T
IXFH120N25T
V DSS
I D25
R DS(on)
= 250V
= 120A
≤ 23m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
S
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
250
V
D (Tab)
V DGR
V GSS
V GSM
I D25
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
250
± 20
± 30
120
V
V
V
A
TO-247 (IXFH)
I DM
I A
E AS
P D
dv/dt
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
300
60
500
890
20
A
A
mJ
W
V/ns
G
D
G = Gate
S = Source
S
D (Tab)
D = Drain
Tab = Drain
T J
-55 to +150
° C
T JM
T stg
+150
-55 to +150
° C
° C
Features
T L
T SOLD
M d
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13/10
4
6
° C
° C
Nm/lb.in.
g
g
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
250
V
Easy to Mount
Space Savings
High Power Density
V GS(th)
I GSS
V DS = V GS , I D = 4mA
V GS = ± 20V, V DS = 0V
3.0
5.0
± 200
V
nA
Applications
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
25 μ A
1.5 mA
23 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100384A(11/11)
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相关代理商/技术参数 |
参数描述 |
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| IXFH12N100 | 功能描述:MOSFET 1KV 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH12N100 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH12N100F | 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFH12N100F_03 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerRF Power MOSFETs |
| IXFH12N100P | 功能描述:MOSFET 12 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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