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参数资料
| 型号： | IXFK36N60 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 36A TO-264AA |
| 产品目录绘图： | TO-264(AA) Package |
| 标准包装： | 25 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 325nC @ 25V |
| 输入电容 (Ciss) @ Vds： | 9000pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264AA |
| 包装： | 管件 |
Preliminary Data
IXFK 32N60
IXFK 36N60
IXFN 32N60
IXFN 36N60
V DSS
I D25
R DS(on)
t rr
HiPerFET TM Power MOSFET
IXFK/FN 36N60 600V 36A
IXFK/FN 32N60 600V 32A
0.18 ?
0.25 ?
250ns
250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V DSS
T J = 25 ° C to 150 ° C
600
600
V
V DGR
V GS
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
600
± 20
600
± 20
V
V
G
D
S
D (TAB)
V GSM
I D25
I DM
I AR
E AR
dv/dt
P D
T J
T JM
T stg
T L
Transient
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
± 30
32N60 32
36N60 36
32N60 128
36N60 144
20
30
5
500
-55 ...
-55 ...
300
± 30
32
36
128
144
20
30
5
520
+150
150
+150
-
V
A
A
A
A
A
mJ
V/ns
W
° C
° C
° C
° C
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
Features
? International standard packages
? JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
V ISOL
M d
50/60 Hz, RMSt = 1 min
I ISOL ≤ 1 mAt = 1 s
Mounting torque
Terminal connection torque
- 2500
- 3000
0.9/6 1.5/13
- 1.5/13
V~
V~
Nm/lb.in.
Nm/lb.in.
? miniBLOC with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
Weight
10
30
g
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
? DC-DC converters
? Synchronous rectification
? Battery chargers
V DSS
V GH(th)
I GSS
I DSS
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
600
2
4.5
± 200
400
2
V
V
nA
μ A
mA
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
? Low voltage relays
Advantages
V GS = 10 V, I D = 0.5 I D25
R DS(on)
36N60
Pulse test, t ≤ 300 μ s, duty cycle ≤ 2 % 32N60
0.18
0.25
?
?
? Easy to mount
? Space savings
? High power density
I XYS IXYS the right All rights limits, test
?1996 reserves Corporation. change reserved. conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
92807G (01/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
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| IXFK40N90P | MOSFET N-CH TO-264 |
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| IXFK44N55Q | MOSFET N-CH 550V 44A 0TO-264 |
| IXFK44N60 | MOSFET N-CH 600V 44A TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFK36N60P | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK38N80Q2 | 功能描述:MOSFET 38 Amps 800V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK38N80Q2_08 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
| IXFK40N50Q2 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class |
| IXFK40N60 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET |
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