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参数资料
| 型号： | IXFN170N10 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 170A SOT-227B |
| 标准包装： | 10 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 170A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 515nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10300pF @ 25V |
| 功率 - 最大： | 600W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
HiPerFET TM
V DSS
I D25
R DS(on)
t rr
Power MOSFET
IXFN170N10
IXFK170N10
100V
100V
170A
170A
10m W
10m W
200ns
200ns
Single MOSFET Die
Preliminary data
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
IXFK IXFN
170N10
170N10
V DSS
V DGR ?
T J = 25°C to 150°C
T J = 25°C to 150°C
100
100
100
100
V
V
G
D
S
D (TAB)
V GS
V GSM
Continuous
Transient
± 20
± 30
± 20
± 30
V
V
miniBLOC, SOT-227 B (IXFN)
I D25
I D125 ?
I DM ?
I AR
E AR
dv/dt
T C = 25 ° C
T C = 125 ° C
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS
T J ￡ 150 ° C, R G = 2 W
170 ?
76
680
170
60
5
170
NA
680
170
60
5
A
A
A
mJ
V/ns
E153432
G
S
D
S
P D
T C = 25 ° C
560
600 W
G = Gate
D = Drain
T J
T JM
T stg
-55 ... +150 ° C
150
-55 ... +150 ° C
° C
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
T L
1.6 mm (0.063 in) from case for 10 s
300
N/A
° C
Features
V ISOL
50/60 Hz, RMS
I ISOL ￡ 1 mA
t = 1 min
t=1s
N/A
N/A
2500
3000
V~
V~
· International standard packages
· Encapsulating epoxy meets
UL 94 V-0, flammability classification
M d
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
· miniBLOC with Aluminium nitride
isolation
Weight
10
30
g
· Low R DS (on) HDMOS TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
· Low package inductance
· Fast intrinsic Rectifier
V DSS
V GS = 0 V, I D = 3mA
V DSS temperature coefficient
100
0.077
V
%/K
Applications
· DC-DC converters
· Synchronous rectification
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 8mA
V GS(th) temperature coefficient
V GS = ± 20V, V GS = 0V
V DS = 0.8 ? V DSS V
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 ms,
duty cycle d ￡ 2 %
T J = 25 ° C
T J = 125 ° C
2
-0.183
4
± 200
400
2
10
V
%/K
nA
m A
mA
m W
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
97505D (7/00)
1-4
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