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参数资料
| 型号： | IXFN180N20 |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 180A SOT-227B |
| 产品目录绘图： | SOT-227, SOT-227B miniBLOC |
| 标准包装： | 10 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 180A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 660nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 22000pF @ 25V |
| 功率 - 最大： | 700W |
| 安装类型： | 底座安装 |
| 封装/外壳： | SOT-227-4，miniBLOC |
| 供应商设备封装： | SOT-227B |
| 包装： | 管件 |
HiPerFET TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
IXFN 180N20
D
V DSS
I D25
R DS(on)
t rr
= 200 V
= 180 A
= 10 m W
< 250 ns
Avalanche Rated, High dv/dt, Low t rr
Preliminary data
S
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GS
V GSM
I D25
I L(RMS)
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
Transient
T C = 25 ° C, Chip capability
Terminal current limit
200
200
± 20
± 30
180
100
V
V
V
V
A
A
E153432
G
S
D
S
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
720
36
A
A
G = Gate
S = Source
D = Drain
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
64
4
5
700
-55 ... +150
150
-55 ... +150
mJ
J
V/ns
W
° C
° C
° C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? International standard packages
? miniBLOC, with Aluminium nitride
isolation
V ISOL
M d
50/60 Hz, RMS t = 1 min
I ISOL ￡ 1 mA t=1s
Mounting torque
Terminal connection torque
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
Weight
30
g
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Battery chargers
V DSS
V GH(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
200
2
4
± 200
100
2
V
V
nA
m A
mA
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s,
duty cycle d ￡ 2 %
10 m W
? Easy to mount
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98551B (7/00)
1-2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFN180N20 | 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:200V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:700W ;RoHS Compliant: Yes |
| IXFN180N25T | 功能描述:MOSFET 155A 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFN185N10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 185A I(D) |
| IXFN200N06 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFN200N07 | 功能描述:MOSFET 70V 200A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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