- 您现在的位置：买卖IC网 > Datasheet目录458 > IXFT94N30T (IXYS)MOSFET N-CH 300V 94A TO-268 Datasheet资料下载
参数资料
| 型号： | IXFT94N30T |
| 厂商： | IXYS |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 300V 94A TO-268 |
| 标准包装： | 30 |
| 系列： | * |
IXFT94N30T
IXFH94N30T
28
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
28
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
26
24
R G = 2 ? , V GS = 10V
V DS = 150V
26
24
R G = 2 ? , V GS = 10V
V DS = 150V
22
20
I
D
= 94A
22
20
T J = 125oC
18
18
16
14
12
10
I
D = 47A
16
14
12
10
T J = 25oC
25
35
45
55
65
75
85
95
105
115
125
45
50
55
60
65
70
75
80
85
90
95
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
300
180
24
90
t r
t d(on) - - - -
22
t f
t d(off) - - - -
250
200
T J = 125oC, V GS = 10V
V DS = 150V
150
120
20
18
R G = 2 ? , V GS = 10V
V DS = 150V
80
70
16
150
100
I D = 94A
I D = 47A
90
60
14
12
I D = 47A, 94A
60
50
10
50
30
8
40
0
0
6
30
2
4
6
8
10
12
14
16
18
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
24
100
350
320
22
20
t f t d(off ) - - - -
R G = 2 ? , V GS = 10V
V DS = 150V
90
80
300
250
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 150V
280
240
18
T J = 125oC
70
16
60
200
I D = 47A
200
150
160
14
12
50
40
100
I
D
= 94A
120
10
8
T J = 25oC
30
20
50
0
80
40
45
50
55
60
65
70
75
80
85
90
95
2
4
6
8
10
12
14
16
18
I D - Amperes
? 2011 IXYS CORPORATION, All Rights Reserved
R G - Ohms
相关PDF资料 |
PDF描述 |
|---|---|
| IXFT96N20P | MOSFET N-CH 200V 96A TO-268 |
| IXFV110N10PS | MOSFET N-CH 100V 110A PLUS220-S |
| IXFV12N120PS | MOSFET N-CH 1200V 12A PLUS220SMD |
| IXFV18N60PS | MOSFET N-CH 600V 18A PLUS220-SMD |
| IXFV22N50PS | MOSFET N-CH 500V 22A PLUS220-SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFT96N20P | 功能描述:MOSFET 96 Amps 200V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFT9N80Q | 功能描述:MOSFET 9 Amps 800V 1.1W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFTN100 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFV10N100P | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Polar Power MOSFET HiPerFET |
| IXFV10N100PS | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Polar Power MOSFET HiPerFET |
发布紧急采购，3分钟左右您将得到回复。