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参数资料
| 型号： | IXGH28N120BD1 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247AD, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 197K |
| 代理商： | IXGH28N120BD1 |
2009 IXYS CORPORATION, All Rights Reserved
Features
International Standard Packages
JEDEC TO-247AD & TO-268
IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
MOS Gate Turn-On
Fast Recovery Expitaxial Diode (FRED)
- Soft Recovery with Low I
RM
Advantages
Saves Space (Two Devices in One
Package)
Easy to Mount with 1 Screw
(Isolated Mounting Screw Hole)
Reduces Assembly Time and Cost
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Drives
DC Servo and Robot Drives
DS98988G(08/09)
IXGH28N120BD1
IXGT28N120BD1
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25°C to 150°C
1200
V
V
CGR
T
J
= 25°C to 150°C, R
GE = 1MΩ
1200
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C ( Chip Capability )
50
A
I
C100
T
C = 100°C
28
A
I
F90
T
C = 90°C
10
A
I
CM
T
C = 25°C, 1ms
150
A
SSOA
V
GE = 15V, TJ = 125°C, RG = 5Ω
I
CM = 120
A
(RBSOA)
Clamped Inductive Load
0.8 V
CES
P
C
T
C = 25°C
250
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum Lead Temperature for Soldering
300
°C
T
SOLD
1.6 mm (0.062 in.) from Case for 10
260
°C
M
d
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
6
g
TO-286
4
g
High Voltage IGBT
w/ Diode
V
CES
= 1200V
I
C25
= 50A
V
CE(sat) ≤
≤≤≤≤ 3.5V
t
fi(typ)
= 170ns
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
GE(th)
I
C
= 250μA, V
CE = VGE
2.5
5.0
V
I
CES
V
CE = VCES, VGE= 0V
50
μA
T
J = 125°C, Note1
250
μA
I
GES
V
CE = 0V, VGE = ±20V
±100
nA
V
CE(sat)
I
C
= 28A, V
GE = 15V, Note 2
2.9
3.5
V
T
J = 125°C
2.8
V
TO-247AD (IXGH)
G = Gate
C
= Collector
E = Emitter
TAB = Collector
TO-268 (IXGT)
(TAB)
G
C
E
C (TAB)
G
E
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相关代理商/技术参数 |
参数描述 |
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| IXGH28N140B3H1 | 功能描述:IGBT 模块 Mid-Frequency Range 15khz-40khz w/ Diode RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IXGH28N30 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH28N30A | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH28N30AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 56A I(C) | TO-247SMD |
| IXGH28N30B | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFAST IGBT |
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