参数资料
型号: IXGP48N60A3
厂商: IXYS CORP
元件分类: IGBT 晶体管
英文描述: 48 A, 600 V, N-CHANNEL IGBT, TO-220AB
封装: TO-220, 3 PIN
文件页数: 2/6页
文件大小: 222K
代理商: IXGP48N60A3
IXYS reserves the right to change limits, test conditions and dimensions.
IXGA48N60A3 IXGH48N60A3
IXGP48N60A3
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
I
C = 32A, VCE = 10V, Note 1
30
48
S
C
ies
3190
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
175
pF
C
res
43
pF
Q
g
110
nC
Q
ge
I
C = 32A, VGE = 15V, VCE = 0.5 VCES
21
nC
Q
gc
42
nC
t
d(on)
25
ns
t
ri
30
ns
E
on
0.95
mJ
t
d(off)
334
ns
t
fi
224
ns
E
off
2.90
mJ
t
d(on)
24
ns
t
ri
30
ns
E
on
1.97
mJ
t
d(off)
545
ns
t
fi
380
ns
E
off
5.60
mJ
R
thJC
0.42 °C/W
R
thCS
(TO-247)
0.25
°C/W
(TO-220)
0.50
°C/W
Note 1: Pulse test, t
≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXGP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242 BSC
e
P
TO-247 (IXGH) Outline
Inductive Load, T
J = 25°C
I
C = 32A, VGE = 15V
V
CE = 480V, RG = 5Ω
Inductive Load, T
J = 25°C
I
C = 32A, VGE = 15V
V
CE = 480V, RG = 5Ω
TO-263 (IXGA) Outline
相关PDF资料
PDF描述
IXGQ28N120B
IXSE503PC SPECIALTY MICROPROCESSOR CIRCUIT, PDIP24
IXSE502PC SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20
J1MAWDD-26XP POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.013A (COIL), 26.5VDC (COIL), 351mW (COIL), 1A (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
J1MSCDD-26XP POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.007A (COIL), 26.5VDC (COIL), 176mW (COIL), 1A (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
相关代理商/技术参数
参数描述
IXGP48N60B3 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:GenX3 600V IGBT
IXGP48N60C3 功能描述:IGBT 晶体管 75Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXGP4N100 功能描述:IGBT 晶体管 8 Amps 1000V 2.70 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXGP50N33TBM-A 功能描述:IGBT 晶体管 50 Amps 330V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXGP50N60B4 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High-Gain IGBTs