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参数资料
| 型号： | IXGP48N60A3 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 222K |
| 代理商： | IXGP48N60A3 |
2008 IXYS CORPORATION, All rights reserved
IXGA48N60A3 IXGH48N60A3
IXGP48N60A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
0
2
4
6
8
10
12
14
10
12
14
16
18
20
22
24
26
28
30
RG - Ohms
E
of
f-
M
illiJ
o
u
le
s
0
1
2
3
4
5
6
7
E
on
-
M
illiJ
o
u
le
s
Eoff
Eon - - - -
TJ = 125C , VGE = 15V
VCE = 480V
I C = 32A
I C = 64A
I C = 16A
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
340
360
380
400
420
440
460
480
500
520
0
3
6
9
121518
21
242730
RG - Ohms
t f
-
N
a
n
o
se
co
n
d
s
400
450
500
550
600
650
700
750
800
850
t
d(
of
f) -
N
a
nos
ec
on
ds
t f
td(off) - - - -
TJ = 125C, VGE = 15V
VCE = 480V
I C = 64A
16A
32A
16A
32A
64A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
3
5
7
9
11
13
15
20
25
30
35
40
45
50
55
60
65
IC - Amperes
E
of
f-
M
illiJ
o
u
le
s
0
1
2
3
4
5
6
E
on
-
M
illiJo
u
le
s
Eoff
Eon - - - -
RG = 5 , VGE = 15V
VCE = 480V
TJ = 125C
TJ = 25C
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
1
2
3
4
5
6
7
8
9
10
11
12
13
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
E
of
f-
M
illiJ
o
u
le
s
0
1
2
3
4
5
6
E
on
-
M
illiJo
u
le
s
Eoff
Eon - - - -
RG = 5 , VGE = 15V
VCE = 480V
I C = 32A
I C = 64A
I C = 16A
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
150
200
250
300
350
400
450
500
15
20
25
30
35
40
45
50
55
60
65
IC - Amperes
t f
-
N
a
no
se
co
nds
300
350
400
450
500
550
600
650
t
d(
of
f) -
N
ano
se
co
nds
t f
td(off) - - - -
RG = 5 , VGE = 15V
VCE = 480V
TJ = 125C
TJ = 25C
Fig. 17. Inductive Turn-on Switching Times
vs. Junction Temperature
10
20
30
40
50
60
70
80
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
t r
-
N
a
n
o
se
co
n
d
s
21
22
23
24
25
26
27
28
t
d(
on)
-
N
a
no
se
co
nds
t r
td(on) - - - -
RG = 5 , VGE = 15V
VCE = 480V
I C = 16A
I C = 32A
I C = 64A
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