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| 型号： | IXI848S1 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 228K |
| 描述： | IC CURRENT MONITOR 0.7% 8SOIC |
| 标准包装： | 98 |
| 功能： | 电流监控器 |
| 检测方法： | 高端 |
| 精确度： | ±0.7% |
| 输入电压： | 2.7 V ~ 40 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IXYS
www.ixys.com
2
06/29/05
IXI848
Absolute Maximum Ratings
Parameter
Rating
Voltage to IN (pin 4)
-0.3V to +45V
Differential Input Voltage (V
SENSE
)
?.4V
Input Current to any pin
?0mA
Operating Ambient Temp Range
-40癈 to +85癈
Operating Junction Temp Range
-40癈 to +125癈
窲A
150癈/W
窲C
40癈/W
Storage Temp Range
-65癈 to +150癈
Lead Temperature (Soldering, 10 sec) +300癈
Absolute Maximum Ratings are stress ratings.
Stresses in excess of these ratings can cause
permanent damage to the device. Functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this data sheet is not implied. Exposure
of the device to the absolute maximum ratings for
an extended period may degrade the device and
affect its reliability.
ESD Warning
ESD (electrostatic discharge) sensitive device. Although the IXI848 feature proprietary ESD protection circuitry, permanent damage
may be sustained if subjected to high energy electrostatic discharges. Proper ESD precautions are recommended to avoid
performance degradation or loss of functionality.
Electrical Characteristics
T
A
= 25癈, V
IN
= 2.7V to 40V, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Operating Voltage
Range
V
IN
2.7
40
V
Supply Current
I
IN
V
IN
= 20V, V
SENSE
= 0V, I
LOAD
= 0A
.065
.130
mA
Full Scale Sense
Voltage
V
SENSE
150
mV
Input Offset
Voltage
V
OS
V
IN
= 12V
-2.0
?.5
2.0
mV
Full Scale
Accuracy
V
SENSE
= 100mV, V
IN
= 12V
T
A
= +25癈
?.7
%
T
A
= +25癈
?.7
V
SENSE
= 100mV
V
IN
= 12V
@ T
A
= -40?to +85癈
?.3
%
T
A
= +25癈
?.8
Total OUT Voltage
Error
(Note 1, Note 2)
V
SENSE
= 100mV
V
IN
= 40V
@ T
A
= -40?to +85癈
?.4
%
T
A
= +25癈
?.5
Gain Accuracy
(Note 2)
V
SENSE
= 20mV
to 100mV
V
IN
= 12V, 40V
@ T
A
= -40?to +85癈
?.1
%
Gain = 10V/V
23
33
43
k&
Gain Setting
Resistance
R
G
V
IN
= 12V
V
SENSE
= 100mV Gain = 50V/V
115
165
215
k&
Note 1: Total OUT voltage error is the sum of gain and offset voltage errors.
Note 2: Production Tested at T
A
=25?/SPAN>C.
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| IXI848S1T/R | 功能描述:电流和电力监控器、调节器 2500 Amps 40V RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| IXI858S1 | 功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXI858S1T/R | 功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXI859S1 | 功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXI859S1T/R | 功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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