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参数资料
| 型号： | IXKR25N80C |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 25A ISOPLUS247 |
| 标准包装： | 30 |
| 系列： | CoolMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 2mA |
| 闸电荷(Qg) @ Vgs： | 355nC @ 10V |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUS247? |
| 供应商设备封装： | ISOPLUS247? |
| 包装： | 管件 |
Advanced Technical Information
CoolMOS ? 1) Power MOSFET
in ISOPLUS247 ? Package
N-Channel Enhancement Mode
IXKR 25N80C
I D25 = 25 A
V DSS = 800 V
R DS(on) = 125 m W
Low R DSon , High V DSS MOSFET
Package with Electrically Isolated Base
D
ISOPLUS 247 ?
G
E 53432
G
D
S
MOSFET
S
G = Gate, D = Drain, S = Source
Features
Symbol
V DSS
V GS
Conditions
T VJ = 25°C to 50°C
Maximum Ratings
800 V
± 20 V
? ISOPLUS247? package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
I D25
I D90
dv/dt
E AS
E AR
T C = 25°C
T C = 90°C
V DS < V DSS ; I F < 7 A | di F /dt | < 00 A/μs
T VJ = 50°C
I D = 4 A; L = 80 mH; T C = 25°C
I D = 7 A; L = 3.3 mH; T C = 25°C
25
8
6
0.67
0.5
A
A
V/ns
mJ
mJ
- High temperature cycling capability
of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
? fast CoolMOS ? ) power MOSFET
3 rd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
min.
typ.
max.
? Enhanced total power density
R DSon
V GS = 0 V; I D = I D90
25
50
m W
Applications
V GS(th)
I DSS
I GSS
Q g
Q gs
Q gd
V DS = 20 V; I D = 2 mA
V DS = V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 25°C
V GS = ± 20 V; V DS = 0 V
V GS = 0 V; V DS = 640 V; I D = 34 A
2
00
80
24
92
4
50
200
355
V
μA
μA
nA
nC
nC
nC
? Switched mode power supplies (SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
t d(on)
t r
t d(off)
t f
V GS = 0 V; V DS = 640 V
I D = 34 A; R G = 2.2 ?
25
5
72
6
ns
ns
ns
ns
V F
R thJC
(reverse conduction) I F = 2.5 A; V GS = 0 V
.3
0.5
V
K/W
)
CoolMOS ? is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
20080526a
-2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXKR40N60 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:CoolMOS Power MOSFET in ISOPLUS247 Package |
| IXKR40N60C | 功能描述:MOSFET 40 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKR47N60C5 | 功能描述:MOSFET 47 Amps 600V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKT70N60C5 | 功能描述:MOSFET 70 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKT70N60C5-TRL | 制造商:IXYS Corporation 功能描述:70 Amps 600V |
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