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| 型号： | IXTA110N055T2 |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 110A TO-263 |
| 产品目录绘图： | TO-263 Package |
| 标准包装： | 50 |
| 系列： | TrenchT2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.6 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3060pF @ 25V |
| 功率 - 最大： | 180W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
Preliminary Technical Information
TrenchT2 TM
Power MOSFET
N-Channel Enhancement Mode
IXTA110N055T2
IXTP110N055T2
V DSS
I D25
R DS(on)
= 55V
= 110A
≤ 6.6m Ω
Avalanche Rated
TO-263 (IXTA)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
55
V
G
S
(TAB)
V DGR
V GSM
I D25
I LRMS
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C
Lead Current Limit, RMS
55
± 20
110
75
V
V
A
A
TO-220 (IXTP)
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
300
50
A
A
G
D
S
(TAB)
E AS
P D
T C = 25 ° C
T C = 25 ° C
400
180
mJ
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Features
International standard packages
T L
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
° C
° C
Nm/lb.in.
g
g
Unclamped Inductive Switching (UIS)
rated
Low package inductance
175°C Operating Temperature
High current handling capability
ROHS Compliant
High performance Trench
Technology for extremely low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Easy to mount
Space savings
BV DSS
V GS = 0V, I D = 250 μ A
55
V
High power density
Synchronous
V GS(th)
V DS = V GS , I D = 250 μ A
2.0
4.0
V
I GSS
V GS = ± 20V, V DS = 0V
± 200
nA
Applications
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 25A , Notes 1, 2
5.5
2 μ A
200 μ A
6.6 m Ω
Automotive Engine Control
Synchronous Buck Converter
(for notebook systempower & General
purpose point & load.)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
? 2008 IXYS CORPORATION, All rights reserved
DS99955(02/08)
相关PDF资料 |
PDF描述 |
|---|---|
| IXTA110N055T7 | MOSFET N-CH 55V 110A TO-263-7 |
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| IXTA120N075T2 | MOSFET N-CH 75V 120A TO-263 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTA110N055T7 | 功能描述:MOSFET 110 Amps 55V 6.7 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA120N04T2 | 功能描述:MOSFET 120 Amps 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA120N075T2 | 功能描述:MOSFET 120 Amps 75V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA120P065T | 功能描述:MOSFET -120 Amps -65V 0.01 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA120P065T T/R | 制造商:IXYS Corporation 功能描述: |
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