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参数资料
| 型号： | IXTA6N100D2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 1000V 6A D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 1000V（1kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 欧姆 @ 3A，0V |
| 闸电荷(Qg) @ Vgs： | 95nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2650pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 30V, I D = 3A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = ± 5V, V DS = 500V, I D = 3A
R G = 2.4 Ω (External)
2.6
4.2
2650
167
41
25
80
34
47
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 5V, V DS = 500V, I D = 3A
95
11
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Q gd
51
nC
R thJC
R thCS
TO-220
TO-247
0.50
0.21
0.41 ° C/W
° C/W
° C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
Test Conditions
Min. Typ. Max.
SOA
V DS = 800V, I D = 225mA, T C = 75 ° C, Tp = 5s
180
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) AD Outline
V SD
t rr
I RM
Q RM
I F = 6A, V GS = -10V, Note 1
I F = 3A, -di/dt = 100A/ μ s
V R = 100V, V GS = -10V
0.8
952
16
7.6
1.3
V
ns
A
μ C
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
D
D1
E
0.40
1.14
8.64
8.00
9.65
0.74
1.40
9.65
8.89
10.41
.016
.045
.340
.280
.380
.029
.055
.380
.320
.405
1 = Gate
2 = Drain
3 = Source
1.
2.
3.
4.
Gate
Drain
Source
Drain
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100
.575
.090
.040
.050
.320
BSC
.625
.110
.055
.070
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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