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参数资料
| 型号： | IXTF230N085T |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 130A ISOPLUS I4 |
| 产品目录绘图： | ISOPLUS i4, i5 Package |
| 标准包装： | 25 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 130A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.3 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250mA |
| 闸电荷(Qg) @ Vgs： | 187nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9900pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | i4-Pac?-5 |
| 供应商设备封装： | ISOPLUS i4-PAC? |
| 包装： | 管件 |
Advance Technical Information
TrenchMV TM
IXTF230N085T
V DSS
= 85 V
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
I D25
R DS(on)
= 130 A
≤ 5.3 m Ω
Avalanche Rated
ISOPLUS i4-Pak TM (5-lead) (IXTF)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25°C to 175°C
T J = 25°C to 175°C; R GS = 1 M Ω
85
55
V
V
V GSM
I D25
Transient
T C = 25°C
± 20
130
V
A
G
S
S
D
D
I L
I DM
I AR
E AS
Package Current Limit, RMS (75 A per lead)
T C = 25°C, pulse width limited by T JM
T C = 25°C
T C = 25°C
150
520
40
1.5
A
A
A
J
G = Gate
S = Source
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
I S ≤ I DM , di/dt ≤ 100 A/ms, V DD ≤ V DSS
T J ≤ 175°C, R G = 3.3 Ω
T C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I ISOL < 1 mA, RMS 2500
3
200
-55 ... +175
175
-55 ... +175
300
260
V
V/ns
W
°C
°C
°C
°C
°C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
F C
Weight
Mounting force
20..120/4.5..25
6
N/lb.
g
Applications
Automotive
- Motor Drives
- 42V Power Bus
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
BV DSS
V GS = 0 V, I D = 250 mA
85
V
Systems
V GS(th)
V DS = V GS , I D = 250 mA
2.0
4.0
V
Distributed Power Architechtures
and VRMs
I GSS
V GS = ± 20 V, V DS = 0 V
± 200 nA
Electronic Valve Train Systems
High Current Switching
I DSS
V DS = V DSS
V GS = 0 V
T J = 150°C
5 μ A
250 μ A
Applications
High Voltage Synchronous Recifier
R DS(on)
V GS = 10 V, I D = 50 A, Notes 1, 2
5.3 m Ω
DS99746 (01/07)
? 2007 IXYS CORPORATION All rights reserved
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