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参数资料
| 型号： | IXTF280N055T |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 160A ISOPLUS I4 |
| 产品目录绘图： | ISOPLUS i4, i5 Package |
| 标准包装： | 25 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 160A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9800pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | i4-Pac?-5 |
| 供应商设备封装： | ISOPLUS i4-PAC? |
| 包装： | 管件 |
IXTF280N055T
Symbol
Test Conditions
Characteristic Values
(T J = 25°C unless otherwise specified)
Min.
Typ.
Max.
ISOPLUS i4-Pak TM (5-Lead)
(IXTF) Outline
g fs
C iss
C OSS
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 50 A
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
70
110
9800
1450
320
32
55
49
37
200
50
50
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.75 °C/W
R thCH
Source-Drain Diode
0.15
Characteristic Values
°C/W
T J = 25°C unless otherwise specified)
Symbol
I S
I SM
Test Conditions
V GS = 0 V
Pulse width limited by T JM
Min.
Typ.
Max.
150
600
A
A
V SD
t rr
I F = 50 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
V R = 25 V, V GS = 0 V
40
1.0
V
ns
Leads:
1. Gate;
2, 3.
Source;
4, 5. Drain
Notes: 1. Pulse test: t ≤ 300 μ s, duty cycled ≤ 2 %;
6. Isolated.
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
All leads and tab are tin plated.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
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