参数资料
型号: IXTH10N100D
厂商: IXYS CORP
元件分类: JFETs
英文描述: 10 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封装: PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 127K
代理商: IXTH10N100D
2009 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
Continuous
Transient
Maximum Ratings
V
DSX
V
DGX
V
GSX
V
GSM
1000
1000
V
V
±
30
±
40
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, Pulse Width Limited by T
JM
T
C
= 25
°
C
10
20
A
A
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
TO-268 4.0 g
TO-247 6.0 g
400
W
- 55 ... +150
°
C
°
C
°
C
150
- 55 ... +150
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°
C
°
C
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
DS99529A(04/09)
Symbol
(T
J
= 25
°
C, Unless Otherwise Specified)
Min. Typ. Max.
V
GS
= -10V, I
D
= 250
μ
A
V
DS
= 25V, I
D
= 250
μ
A
V
GS
=
±
30V, V
DS
= 0V
Test Conditions Characteristic Values
BV
DSX
1000
V
V
GS(off)
-1.5 - 3.5 V
I
GSS
±
100 nA
I
DSS
V
DS
= V
DSX
, V
GS
= -10V
T
J
= 125
°
C
25
μ
A
500
μ
A
R
DS(on)
V
GS
= 10V, I
D
= 10A, Note 1
1.4
Ω
I
D(on)
V
GS
= 0V, V
DS
= 25V, Note 1
1.0
A
High Voltage
MOSFETs
N-Channel, Depletion Mode
IXTH10N100D
IXTT10N100D
V
DSX
I
D25
R
DS(on)
1.4
Ω
= 1000V
= 10A
Features
Normally ON Mode
International Standard Packages
Molding Epoxies meet UL
94
V-0
Flammability Classification
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Level Shifting
Triggers
Solid State Relays
Current Regulators
Active Load
Preliminary Technical Information
G = Gate
S = Source
D = Drain
TAB = Drain
TO-247 (IXTH)
G
DS
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)
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