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参数资料
| 型号： | IXTH10N100D |
| 厂商： | IXYS CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 1000 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 127K |
| 代理商： | IXTH10N100D |
IXTH10N100D
IXTT10N100D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol
(T
J
= 25
°
C, Unless Otherwise Specified)
Min. Typ. Max.
Test Conditions Characteristic Values
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 30V, I
D
= 0.5 I
D25
, Note 1 3.0 5.4
S
2500
pF
V
GS
= -10V, V
DS
= 25V, f = 1MHz
300
pF
100
pF
35
ns
85
110
ns
ns
75
ns
Q
g(on)
Q
gs
Q
gd
130
nC
V
GS
= 10V, V
DS
= 0.5 V
DSX
, I
D
= 0.5 I
D25
27
nC
58
nC
R
thJC
R
thCS
0.31
°
C/W
(TO-247) 0.21
°
C/W
Source-Drain Diode
Symbol
(T
J
= 25
°
C, Unless Otherwise Specified)
Test Conditions Characteristic Values
Min. Typ. Max.
V
SD
I
F
= I
D25
, V
GS
= -10V, Note 1
I
F
= 10A, -di/dt = 100A/
μ
s
V
R
= 100V, V
GS
= -10V
1.1 1.5 V
t
rr
850
ns
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
4,881,106
Note 1: Pulse Test, t
≤
300
μ
s; Duty Cycle, d
≤
2%.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 V
DSX
, I
D
= 0.5 I
D25
R
G
= 4.7
Ω
(External)
TO-268 (IXTT) Outline
e
P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
3 - Source
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Dim.
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTH10N60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 |
| IXTH10N60A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 |
| IXTH10N80 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) | TO-218VAR |
| IXTH10N90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-218VAR |
| IXTH10N95 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) | TO-218VAR |
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