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| 型号： | IXTH130N20T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 130A TO-247 |
| 标准包装： | 30 |
| 系列： | TrenchHV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 130A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8800pF @ 25V |
| 功率 - 最大： | 830W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH130N20T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
g fs
V DS = 10V; I D = 60A, Note 1
70
120
S
C iss
C oss
V GS = 0V, V DS = 25V, f = 1MHz
8800
970
pF
pF
1
2
3
?P
C rss
122
pF
t d(on)
t r
Resistive Switching, 25 ° C
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
25
18
ns
ns
t d(off)
R G = 2.0 Ω (External)
57
ns
e
t f
22
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
150
44
nC
nC
Dim. Millimeter
Min. Max.
A 4.7 5.3
Inches
Min. Max.
.185 .209
Q gd
42
nC
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
R thJC
R thCS
0.21
0.18 ° C/W
° C/W
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
.040 .055
.065 .084
.113 .123
.016 .031
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.819 .845
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
I S
V GS = 0V
I SM
Pulse width limited by T JM
V SD
I F = 50A, V GS = 0V, Note 1
I F = 65A, -di/dt = 100A/ μ s
t rr
Min.
Characteristic Values
Typ. Max.
130
A
320
A
1.0
V
150
ns
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
V R = 100V, V GS = 0V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %;
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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相关代理商/技术参数 |
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| IXTH13N110 | 功能描述:MOSFET 13 Amps 1100V 0.92 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH13N65 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13N80 | 功能描述:MOSFET 13 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH13N90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13P15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 13A I(D) | TO-218VAR |
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