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| 型号： | IXTH240N055T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 240A TO-247 |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 240A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7600pF @ 25V |
| 功率 - 最大： | 480W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH240N055T
IXTQ240N055T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
75
132
7600
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1240
pF
1
2
3
C rss
260
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 ? (External)
40
54
63
ns
ns
ns
t f
Q g(on)
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
75
170
32
48
ns
nC
nC
nC
0.31 ° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
R thCS
0.25
° C/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
70
240
650
1.2
A
A
V
ns
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
.140 .144
0.232 0.252
.170 .216
242 BSC
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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