参数资料
型号: IXTH90N15T
厂商: IXYS
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N-CH 150V 90A TO247
标准包装: 30
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 45A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 1mA
闸电荷(Qg) @ Vgs: 80nC @ 10V
输入电容 (Ciss) @ Vds: 4100pF @ 25V
功率 - 最大: 455W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
40
69
4100
560
92
24
22
44
19
80
20
20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.33 ° C/W
R thCH
TO-220
TO-3P, TO-263, TO-247
0.25
0.21
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive
I F = 50A, V GS = 0V, Note 1
I F =45A, -di/dt = 250A/ μ s
V R = 75V, V GS = 0V
110
90
300
1.2
A
A
V
ns
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
* : Current may be limited by external terminal current limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
PDF描述
IXTI12N50P MOSFET N-CH 500V 12A I2-PAK
IXTJ36N20 MOSFET N-CH 200V 36A TO-247AD
IXTK102N30P MOSFET N-CH 300V 102A TO-264
IXTK110N30 MOSFET N-CH 300V 110A TO-264
IXTK120N20P MOSFET N-CH 200V 120A TO-264
相关代理商/技术参数
参数描述
IXTH90P10P 功能描述:MOSFET -90.0 Amps -100V 0.250 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH96N20P 功能描述:MOSFET 96 Amps 200V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH96N25T 功能描述:MOSFET 96 Amps 250V 36 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH96P085T 功能描述:MOSFET -96 Amps -85V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH98N20T 功能描述:MOSFET 98 Amps 200V 26 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube