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参数资料
| 型号： | IXTK110N20L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 110A TO-264 |
| 标准包装： | 25 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 500nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 23000pF @ 25V |
| 功率 - 最大： | 960W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
IXTK110N20L2
IXTX110N20L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 (IXTK) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
55
75
95
S
C iss
23
nF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
2160
320
40
100
33
135
500
110
182
0.15
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.13 ° C/W
° C/W
Safe-Operating-Area Specification
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
SOA
V DS = 200V, I D = 2.88A, T C = 75 ° C, Tp = 5s
575
W
PLUS 247 TM (IXTX) Outline
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 55A, V GS = 0V, Note 1
110
440
1.35
A
A
V
t rr
I RM
Q RM
I F = 55A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
420
39
8.3
ns
A
μ C
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Note
1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
Dim.
A
A 1
A 2
b
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
b 1
b 2
C
D
E
e
L
L1
Q
R
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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