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| 型号： | IXTQ52P10P |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 52A TO-3P |
| 标准包装： | 30 |
| 系列： | PolarP™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 52A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2845pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
PolarP TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
V DSS
I D25
R DS(on)
=
=
≤
- 100V
- 52A
50 m Ω
TO-263 (I XTA )
TO-247 (IXTH)
TO-220 (I XTP )
Symbol
G
S
D (TAB)
Test Conditions
G
D
S
D (TAB)
Maximum Ratings
G
D S
D (TAB)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
-100
-100
± 20
V
V
V
TO-3P (IXTQ)
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
- 52
-130
V
A
A
G
D
S
D (TAB)
I AR
E AS
T C = 25 ° C
T C = 25 ° C
- 52
1.5
A
J
G = Gate
S = Source
D = Drain
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
M d
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-3P,TO-220,TO-247)
TO-247
TO-3P
TO-220
TO-263
10
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
5.5
3.0
2.5
V/ns
W
° C
° C
° C
° C
° C
Nm/lb.in.
g
g
g
g
Features:
International standard packages
Fast intrinsic diode
Dynamic dV/dt Rated
Avalanche Rated
Rugged PolarP TM process
Low Q G and R ds(on) characterization
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Applications:
Hight side switching
Push-pull amplifiers
DC Choppers
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Current regulators
Automatic test equipment
BV DSS
V GS = 0V, I D = - 250 μ A
-100
V
Advantages:
V GS(th)
V DS = V GS , I D = - 250 μ A
- 2.5
- 4.5
V
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
Low gate charge results in simple
drive requirement
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = -10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
-10 μ A
-150 μ A
50 m Ω
Improved Gate, Avalanche and
dynamic dV/dt ruggedness
High power density
Fast switching
Easy to parallel
? 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
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| IXTQ60N30T | 功能描述:MOSFET 60 Amps 300V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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