- 您现在的位置：买卖IC网 > Datasheet目录465 > IXTR32P60P (IXYS)MOSFET P-CH 600V 18A ISOPLUS247 Datasheet资料下载
参数资料
| 型号： | IXTR32P60P |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 600V 18A ISOPLUS247 |
| 标准包装： | 30 |
| 系列： | PolarP™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 385 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 196nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 11100pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUS247? |
| 供应商设备封装： | ISOPLUS247? |
| 包装： | 管件 |
IXTR32P60P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS247 (IXTR) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = -10V, I D = -16A, Note 1
V GS = 0V, V DS = - 25V, f = 1MHz
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = -16A
R G = 1 Ω (External)
V GS = -10V, V DS = 0.5 ? V DSS , I D = -16A
21
32
11.1
925
77
37
27
95
33
196
54
58
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.40 ° C/W
R thCS
Source-Drain Diode
0.15
° C/W
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = -16A, V GS = 0V, Note 1
I F = -16A, -di/dt = -150A/ μ s
V R = -100V, V GS = 0V
480
11.4
- 47.6
- 32
- 128
- 2.8
A
A
V
nS
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| IXTR36P15P | MOSFET P-CH 150V 22A ISOPLUS247 |
| IXTR48P20P | MOSFET P-CH 200V 30A ISOPLUS247 |
| IXTR62N15P | MOSFET N-CH ISOPLUS-247 |
| IXTT100N25P | MOSFET N-CH 250V 100A TO-268 |
| IXTT110N10P | MOSFET N-CH 100V 110A TO-268 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTR36P15P | 功能描述:MOSFET -22.0 Amps -150V 0.120 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTR40P50P | 功能描述:MOSFET -22.0 Amps -500V 0.260 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTR48P20P | 功能描述:MOSFET -30.0 Amps -200V 0.093 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTR62N15P | 功能描述:MOSFET 62 Amps 150V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTR90P10P | 功能描述:MOSFET -57.0 Amps -100V 0.270 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。