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参数资料
| 型号： | IXTT40N50L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40A 500V TO-268 |
| 产品目录绘图： | TO-268 Package |
| 标准包装： | 30 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 320nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10400pF @ 25V |
| 功率 - 最大： | 540W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-268-3，D³Pak（2 引线+接片），TO-268AA |
| 供应商设备封装： | TO-268 |
| 包装： | 管件 |
IXTH40N50L2 IXTQ40N50L2
IXTT40N50L2
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
11
15
19
S
C iss
10.4
nF
C oss
C rss
V GS = 0V, V DS = 25V, f = 1MHz
655
155
pF
pF
1
2
3
? P
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247&TO-3P)
50
133
127
44
320
64
198
0.25
ns
ns
ns
ns
nC
nC
nC
0.23 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
Safe Operating Area Specification
Symbol Test Conditions
Min.
Typ.
Max.
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
.040 .055
.065 .084
.113 .123
.016 .031
SOA
V DS = 400V, I D = 0.8A, T C = 75°C, tp = 3s
320
W
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
S ource-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s, V R = 100V
500
40
160
1.5
A
A
V
ns
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
.170 .216
242 BSC
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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