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| 型号： | IXTT60N20L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 60A TO268 |
| 标准包装： | 30 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 255nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10500pF @ 25V |
| 功率 - 最大： | 540W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-268-3，D³Pak（2 引线+接片），TO-268AA |
| 供应商设备封装： | TO-268 |
| 包装： | 管件 |
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-3P (IXTQ) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
35
44
53
S
C iss
10.5
nF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247&TO-3P)
1080
255
26
23
90
18
255
48
90
0.25
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.23 ° C/W
° C/W
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V DS = 160V, I D = 1.88A, T C = 75°C, t p = 3s
Min.
300
Typ.
Max.
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
I S V GS = 0V
Characteristic Values
Min. Typ. Max.
60
A
TO-247 (IXTH) Outline
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
240
1.4
A
V
t rr
I RM
Q RM
I F = 30A, -di/dt = 100A/ μ s,
V R = 75V, V GS = 0V
330
25.0
4.13
ns
A
μ C
1
2
3
? P
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
b 1.0 1.4
.040 .055
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
.016 .031
.819 .845
.610 .640
0.205 0.225
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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