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参数资料
型号： IXXH75N60C3D1
厂商： IXYS CORP
元件分类： IGBT 晶体管
英文描述： 150 A, 600 V, N-CHANNEL IGBT, TO-247AD
封装： TO-247AD, 3 PIN
文件页数： 2/7页
文件大小： 188K
代理商： IXXH75N60C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH75N60C3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
e
P
TO-247 (IXXH) Outline
1
2
3
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
V
F
I
F = 24A, VGE = 0V, Note 1
2.7
V
T
J = 150°C
1.6
V
I
RM
T
J = 100°C
4
A
t
rr
T
J = 100°C
100
ns
25
ns
R
thJC
0.9 °C/W
I
F = 30A, VGE = 0V, -diF/dt = 100A/μs,
V
R = 100V
I
F
= 1A, V
GE = 0V, -diF/dt = 100A/μs, VR = 30V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 60A, VCE = 10V, Note 1
20
33
S
C
ies
3300
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
195
pF
C
res
63
pF
Q
g(on)
107
nC
Q
ge
I
C = 75A, VGE = 15V, VCE = 0.5 VCES
28
nC
Q
gc
46
nC
t
d(on)
35
ns
t
ri
75
ns
E
on
1.60
mJ
t
d(off)
90
130
ns
t
fi
75
ns
E
off
0.80
1.40 mJ
t
d(on)
33
ns
t
ri
72
ns
E
on
2.50
mJ
t
d(off)
105
ns
t
fi
80
ns
E
off
1.07
mJ
R
thJC
0.20 °C/W
R
thCS
0.21
°C/W
Inductive load, T
J = 25°C
I
C = 60A, VGE = 15V
V
CE = 400V, RG = 5Ω
Note 2
Inductive load, T
J = 150°C
I
C = 60A, VGE = 15V
V
CE = 400V, RG = 5Ω
Note 2
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