参数资料
型号: JAN1N4975US
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 齐纳二极管
英文描述: Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
中文描述: 51 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 1/4页
文件大小: 607K
代理商: JAN1N4975US
VOIDLESS-HERMETICALLY-SEALED
5 WATT GLASS ZENER DIODES
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2005
2-4-2005 REV C
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SCOTTSD A L E DIVISION
1N4954 thru 1N4996, 1N5968 thru 1N5969, and
1N6632 thru 1N6637
1N4954
t
h
ru
1
N
4996
1N5968
t
h
ru
1
N
5969
1N6632
t
h
ru
1
N
6637
DESCRIPTION
APPEARANCE
T
his Zener Voltage Regulator series is military qualified to MIL-PRF-
19500/356 and is ideal for high-reliability applications where a failure
cannot be tolerated.
These industry-recognized 5 Watt Zener Voltage
Regulators are hermetically sealed with voidless-glass construction using
an internal metallurgical bond. It includes Zener selections from 3.3 to 390
volts in standard 5% tolerances as well as tighter tolerances identified by
different suffix letters on the part number. They are also available in
surface-mount packages (see separate data sheet for 1N4954US thru
1N4996US, 1N5968US thru 1N5969US, and 1N6632US thru 1N6637US).
Microsemi also offers numerous other Zener products to meet higher and
lower power ratings in both thru-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds for 1N4954
thru 1N4996, and “Category III” for 1N6632 thru
1N6637 as well as 1N5968 thru 1N5959
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/356
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N4954US thru 1N4996US,
1N6632US thru 1N6637US and 1N5968US thru
1N5969US
Regulates voltage over a broad operating current and
temperature range
Extensive selection from 3.3 to 390 V
Standard voltage tolerances are plus/minus 5% with
no suffix
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Temperature: -65oC to +175oC.
Storage Temperature: -65oC to +175oC.
Power Dissipation: 5 Watts @ TA = 25oC
Thermal Resistance: 22oC/W junction to lead at 3/8
inch (10 mm) from body for 1N4954 thru 1N4996 and
30
oC/W for 1N6632 thru 1N6637, 1N5968 thru
1N5969
Thermal Impedance at 10 ms: 1.8oC/W for 1N4954
thru 1N4996, and 3.0
oC/W for both the 1N6632 thru
1N6637 & 1N5968 thru 1N5969
Forward Voltage: 1.50 V at 1.0 A
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper except for JANS with solid Silver (Ag) and
no finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
“E” Package
相关PDF资料
PDF描述
JAN1N4978US Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N966DUR-1 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JANTX1N976DUR-1 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JANTXV1N976DUR-1 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N986DUR-1 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
相关代理商/技术参数
参数描述
JAN1N4976 制造商:Microsemi Corporation 功能描述:ZENER SGL 56V 5% 5W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 56V 5W
JAN1N4976C 功能描述:Zener Diode 56V 5W ±2% Through Hole E, Axial 制造商:microsemi ire division 系列:军用,MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳(标称值)(Vz):56V 容差:±2% 功率 - 最大值:5W 阻抗(最大值)(Zzt):35 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 42.6V 不同 If 时的电压 - 正向(Vf):1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:通孔 封装/外壳:E,轴向 供应商器件封装:E,轴向 标准包装:1
JAN1N4976CUS 功能描述:Zener Diode 56V 5W ±2% Surface Mount D-5B 制造商:microsemi ire division 系列:军用,MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳(标称值)(Vz):56V 容差:±2% 功率 - 最大值:5W 阻抗(最大值)(Zzt):35 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 42.6V 不同 If 时的电压 - 正向(Vf):1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:SQ-MELF,E 供应商器件封装:D-5B 标准包装:1
JAN1N4976D 功能描述:Zener Diode 56V 5W ±1% Through Hole E, Axial 制造商:microsemi ire division 系列:军用,MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳(标称值)(Vz):56V 容差:±1% 功率 - 最大值:5W 阻抗(最大值)(Zzt):35 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 42.6V 不同 If 时的电压 - 正向(Vf):1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:通孔 封装/外壳:E,轴向 供应商器件封装:E,轴向 标准包装:1
JAN1N4976DUS 功能描述:Zener Diode 56V 5W ±1% Surface Mount D-5B 制造商:microsemi ire division 系列:军用,MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳(标称值)(Vz):56V 容差:±1% 功率 - 最大值:5W 阻抗(最大值)(Zzt):35 欧姆 不同?Vr 时的电流 - 反向漏电流:2μA @ 42.6V 不同 If 时的电压 - 正向(Vf):1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:SQ-MELF,E 供应商器件封装:D-5B 标准包装:1