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参数资料
| 型号： | JANS2N3737 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 |
| 中文描述： | 晶体管|晶体管|叩| 50V五（巴西）总裁| 1.5AI（丙）|的TO - 46 |
| 文件页数： | 2/20页 |
| 文件大小： | 128K |
| 代理商： | JANS2N3737 |
MIL-PRF-19500/560E
10
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurements
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
Subgroup 2 of table I herein;
I
CBO1 = ± 100 percent of initial value or
1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS2N3737UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N3740 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3741 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/396 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1.5A 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:900mV @ 100mA，1A 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-55°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:TO-205AD，TO-39-3 金属罐 供应商器件封装:TO-39（TO-205AD） 标准包装:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
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