- 您现在的位置：买卖IC网 > PDF目录299238 > JANS2N3737 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 PDF资料下载
参数资料
| 型号： | JANS2N3737 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 |
| 中文描述： | 晶体管|晶体管|叩| 50V五（巴西）总裁| 1.5AI（丙）|的TO - 46 |
| 文件页数： | 7/20页 |
| 文件大小： | 128K |
| 代理商： | JANS2N3737 |
MIL-PRF-19500/560E
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 4
Small - signal short -
circuit forward -
current transfer ratio
3306
VCE = 10 V dc; IC = 0.5 A dc;
f = 10 MHz
|hfe|
3
15
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0; 100 kHz
≤ f ≤ 1 MHz
Cobo
250
pF
Input capacitance
(output open -
circuited)
3240
VBE = 2.0 V dc; IC = 0; 100 kHz
≤ f ≤ 1 MHz (see 4.5.2)
Cibo
1,000
pF
Pulse response
Pulse delay time
3251
See figure 6
td
100
ns
Pulse rise time
3251
See figure 6
tr
100
ns
Pulse storage time
3251
See figure 7
ts
2
s
Pulse fall time
3251
See figure 7
tf
200
ns
Subgroup 5
Safe operating area
(continuous dc)
3051
TC = +25°C; t ≥ 0.5 s; 1 cycle
Test 1
VCE = 2.0 V dc; IC = 5.0 A dc
Test 2
Test 3
End-point electrical
measurements
VCE = 5.0 V dc; IC = 2.0 A dc
VCE = 90 V dc; IC = 55 mA dc
See table I, group A, subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for laser marked devices.
5/ Not required for JANS devices.
相关PDF资料 |
PDF描述 |
|---|---|
| JANS2N3737UB | BJT |
| JANS2N3749 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANS2N3996 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANS2N3997 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANS2N3998 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANS2N3737UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N3740 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3741 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/396 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1.5A 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:900mV @ 100mA，1A 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-55°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:TO-205AD，TO-39-3 金属罐 供应商器件封装:TO-39（TO-205AD） 标准包装:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
发布紧急采购，3分钟左右您将得到回复。