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参数资料
| 型号： | JANS2N3737 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 |
| 中文描述： | 晶体管|晶体管|叩| 50V五（巴西）总裁| 1.5AI（丙）|的TO - 46 |
| 文件页数： | 3/20页 |
| 文件大小： | 128K |
| 代理商： | JANS2N3737 |
MIL-PRF-19500/560E
11
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for
JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in
accordance with group A, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB ≥ 10 V dc.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc; PD ≥ 100 percent of rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table Via, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
Test condition A.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
*
1
1027
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall
be applied to the device to achieve TJ = +175°C minimum, and minimum power
dissipation of 75 percent of max rated PT (see 1.3 herein); n = 45, C = 0.
2
1027
The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B step 2 shall not be required more than once for any single
wafer lot. n = 45, C = 0.
3
1032
High- temperature life (non-operating), T
A = +200°C, t = 340 hours, n = 22,
C = 0.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein.
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相关代理商/技术参数 |
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| JANS2N3737UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N3740 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
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| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/396 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1.5A 电压 - 集射极击穿（最大值）:60V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:900mV @ 100mA，1A 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-55°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:TO-205AD，TO-39-3 金属罐 供应商器件封装:TO-39（TO-205AD） 标准包装:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
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