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参数资料
| 型号： | JANSH2N7269U |
| 英文描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 3/12页 |
| 文件大小： | 440K |
| 代理商： | JANSH2N7269U |
www.irf.com
11
Pre-Irradiation
IRHF7130
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
Fig 28b. Unclamped Inductive Waveforms
Fig 28a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V/5
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