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参数资料
| 型号： | JANSH2N7269U |
| 英文描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 8/12页 |
| 文件大小： | 440K |
| 代理商： | JANSH2N7269U |
www.irf.com
5
Pre-Irradiation
IRHF7130
Post-Irradiation
Fig 6.
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 5.
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 7.
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b.
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 8a.
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
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